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Two-dimensional CuIn1−xGaxSe 2 nano-flakes by pulse electrodeposition for photovoltaic applications
Centre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur, Hyderabad, Telangana 500005, India ; Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502285, India.
Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502285, India.
University West, Department of Engineering Science, Research Enviroment Production Technology West. (PTW)ORCID iD: 0000-0001-5521-6894
Centre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur, Hyderabad, Telangana 500005, India.
2019 (English)In: Solar Energy, ISSN 0038-092X, E-ISSN 1471-1257, Vol. 181, p. 396-404Article in journal (Refereed) Published
Abstract [en]

Fabrication of Cu(In,Ga)Se 2 (CIGS) absorber layers containing two-dimensional nano-flake structures using a single stage pulse electrodeposition technique is reported for the first time, wherein CuCl 2 , InCl 3 , GaCl 3 and H 2 SeO 3 are used as precursors in a pH 3 buffer. The method employs tri-sodium citrate as complexing agent. The phenomenon of intrinsic electrochemical dissolution associated with pulse electrodeposition technique is efficiently utilized to obtain CIGS nano-flakes. The presence of tri-sodium citrate and the relaxation time during pulse electrodeposition play crucial role in achieving control over composition and morphology of CIGS films thereby aiding in the formation of nano-flakes. Evolution of nano-flake structures is systematically investigated with the increase in deposition time during pulse electrodeposition. Elemental analysis reveals the stoichiometric composition of nano-flake films while the formation of chalcopyrite phase-pure CIGS is confirmed by XRD and Raman analyses. The bandgap of CIGS nano-flakes is inferred to be about 1.21 eV from Tauc's plot. Mott-Schottky studies unveil the p-type conductivity of the CIGS with a flat-band potential and carrier density values of −0.15 V and 5.2 × 10 16 cm −3 , respectively. Photoelectrochemical characterization of CIGS films affirms their photoactivity and the photoresponse is almost 20 times compared to the traditional planar CIGS films. Nanostructured CIGS films fabricated by low-cost pulse electrodeposition method reduce materials consumption while promising excellent photoresponse and are suitable for photovoltaic and photoelectrochemical applications. © 2019 International Solar Energy Society

Place, publisher, year, edition, pages
2019. Vol. 181, p. 396-404
Keywords [en]
Electrochemical dissolution, Nano flakes, Copper indium gallium selenide, Pulse electrodeposition, Photoelectrochemical cells, Solar cells
National Category
Energy Engineering
Research subject
ENGINEERING, Manufacturing and materials engineering
Identifiers
URN: urn:nbn:se:hv:diva-13742DOI: 10.1016/j.solener.2019.02.022ISI: 000463120700043Scopus ID: 2-s2.0-85061605835OAI: oai:DiVA.org:hv-13742DiVA, id: diva2:1297795
Note

Funders: U.S. Department of Energy, DE-AC36-08GO28308; Government of India, IUSSTF/JCERDC-SERIIUS/2012

Available from: 2019-03-21 Created: 2019-03-21 Last updated: 2019-07-25Bibliographically approved

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Joshi, Shrikant V.

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