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Effect of hole-transporting materials on the photovoltaic performance and stability of all-ambient-processed perovskite solar cells
Centre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Hyderabad 500005, India.
Centre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Hyderabad 500005, India.
Centre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Hyderabad 500005, India.
Centre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Hyderabad 500005, India.
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2017 (English)In: Journal of Energy Chemistry, ISSN 2095-4956, Vol. 26, no 3, p. 584-591Article in journal (Refereed) Published
Abstract [en]

High-efficiency perovskite solar cells (PSCs) reported hitherto have been mostly prepared in a moisture and oxygen-free glove-box atmosphere, which hampers upscaling and real-time performance assessment of this exciting photovoltaic technology. In this work, we have systematically studied the feasibility of all-ambient-processing of PSCs and evaluated their photovoltaic performance. It has been shown that phase-pure crystalline tetragonal MAPbI3 perovskite films are instantly formed in ambient air at room temperature by a two-step spin coating process, undermining the need for dry atmosphere and post-annealing. All-ambient-processed PSCs with a configuration of FTO/TiO2/MAPbI3/Spiro-OMeTAD/Au achieve open-circuit voltage (990 mV) and short-circuit current density (20.31 mA/cm2) comparable to those of best reported glove-box processed devices. Nevertheless, device power conversion efficiency is still constrained at 5% by the unusually low fill-factor of 0.25. Dark current–voltage characteristics reveal poor conductivity of hole-transporting layer caused by lack of oxidized spiro-OMeTAD species, resulting in high series-resistance and decreased fill-factor. The study also establishes that the above limitations can be readily overcome by employing an inorganic p-type semiconductor, copper thiocyanate, as ambient-processable hole-transporting layer to yield a fill-factor of 0.54 and a power conversion efficiency of 7.19%. The present findings can have important implications in industrially viable fabrication of large-area PSCs.

The poor conductivity of ambient-processed spiro-OMeTAD HTM layer caused by lack of oxidation is identified as a major performance limiting factor and successfully overcome by replacing with stable inorganic CuSCN.

Place, publisher, year, edition, pages
2017. Vol. 26, no 3, p. 584-591
Keyword [en]
Perovskite, Ambient processing, Solar cell, Hole transport, Series resistance
National Category
Manufacturing, Surface and Joining Technology
Research subject
Production Technology; ENGINEERING, Manufacturing and materials engineering
Identifiers
URN: urn:nbn:se:hv:diva-12002DOI: 10.1016/j.jechem.2016.12.011OAI: oai:DiVA.org:hv-12002DiVA: diva2:1174019
Available from: 2018-01-15 Created: 2018-01-15 Last updated: 2018-01-15Bibliographically approved

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Joshi, Shrikant V.

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