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CuIn1-xGaxSe2 thin-film absorber layers for solar photovoltaics fabricated by two-stage pulsed current electrodeposition
2014 (engelsk)Inngår i: Materials Letters, Vol. 118, s. 158-160Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Single phase polycrystalline Copper Indium Gallium Diselenide (CIGS) thin-films for solar photovoltaic applications were fabricated by an economical two-stage method of Pulsed Current (PC) electrodeposition. Cu, Ga and Se were first co-deposited onto a Mo foil followed by deposition of In. The as-deposited films were annealed in Argon atmosphere at 550 C for 30 min and were further characterized to study their morphology, phase constitution, and optical absorption. The results revealed that the films have a compact morphology and are comprised of a crystalline chalcopyrite single phase CIGS. The bandgap of the CIGS films was found to be 1.27 eV from absorption studies. The photoelectrochemical studies revealed the p-type nature of CIGS films with improved photocurrent over that obtained for one-stage PC electrodeposited CIGS thin-films. © 2013 Elsevier B.V.

sted, utgiver, år, opplag, sider
2014. Vol. 118, s. 158-160
Emneord [en]
CIGS, Electrodeposition, Pulsed current, Solar energy materials, Thin films, Two-stage, Photoelectrochemicals, Polycrystalline copper, Pulsed currents, Pulsed-current electrodeposition, Solar photovoltaics, Gallium, Indium, Morphology, Selenium compounds, Semiconducting selenium compounds, Solar concentrators, Solar energy
Identifikatorer
URN: urn:nbn:se:hv:diva-8475ISBN: 0167577X (ISSN) OAI: oai:DiVA.org:hv-8475DiVA, id: diva2:859840
Tilgjengelig fra: 2015-10-08 Laget: 2015-10-08 Sist oppdatert: 2015-10-08bibliografisk kontrollert

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